1 motorola tmos power mosfet transistor device data product preview smartdiscretes ? internally clamped, n-channel igbt this logic level insulated gate bipolar transistor (igbt) features gateemitter esd protection, gatecollector overvoltage protection from smartdiscretes ? monolithic circuitry for usage as an ignition coil driver . ? temperature compensated gatecollector clamp limits stress applied to load ? integrated esd diode protection ? low threshold voltage to interface power loads to logic or microprocessors ? low saturation voltage ? high pulsed current capability maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces clamped vdc collectorgate voltage v cgr clamped vdc gateemitter voltage v ge clamped vdc collector current e continuous collector current e single pulsed (t p = 10 s) i c i cm 20 60 adc apk total power dissipation (to220) derate above 25 c p d 150 1.0 watts w/ c operating and storage temperature range t j , t stg 55 to 175 c single pulse collectoremitter avalanche energy @ starting t j = 25 c (v cc = 80 v, v ge = 5 v, peak i l = 10 a, l = 10 mh) e as 500 mj thermal characteristics thermal resistance e junction to case (to220) thermal resistance e junction to ambient r jc r ja 1.0 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c mounting torque, 632 or m3 screw 10 lbf in (1.13 n m) smartdiscretes is a trademark of motorola, inc. this document contains information on a new product. specifications and information herein are subject to change without notice . rev 3 order this document by mgp20n14cl/d motorola semiconductor technical data mgp20n14cl 20 amperes voltage clamped nchannel igbt v ce(on) = 1.9 volts 135 volts (clamped) case 221a09 style 9 to220ab g c e c g e ? motorola, inc. 1997
mgp20n14cl 2 motorola tmos power mosfet transistor device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics clamp voltage (i clamp = 10 ma, t j = 40 to 150 c) v (br)ces 135 vdc zero gate voltage collector current (v ce = 100 v, v ge = 0 v) (v ce = 100 v, v ge = 0 v, t j = 150 c) i ces e e e e 10 100 a gateemitter clamp voltage (i g = 1 ma) v (br)ges 10 vdc gateemitter leakage current (v ge = 5 v, v ce = 0 v) i ges e e 1.0 a on characteristics (1) gate threshold voltage (v ce = v ge , i c = 1 ma) threshold temperature coefficient (negative) v ge(th) 1.0 1.5 4.4 2.0 v mv/ c collectoremitter onvoltage (v ge = 5 v, i c = 10 a) (v ge = 5 v, i c = 10 adc, t j = 175 c) v ce(on) e e 1.9 1.8 v forward transconductance (v ce 15 v, i c = 10 a) g fe 8.0 15 e mhos dynamic characteristics input capacitance (v 25 vd v 0vd c ies e 430 600 pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 182 250 transfer capacitance f = 1 . 0 mhz) c res e 48 100 switching characteristics (1) turnon delay time t d(on) e tbd tbd ns rise time (v cc = 68 v, i c = 20 a, t r e tbd tbd turnoff delay time (v cc 68 v , i c 20 a , v ge = 5 v, r g = 9.1 ) t d(off) e tbd tbd fall time t f e tbd tbd total gate charge (v 108 v i 20 a q t e 14 20 nc gateemitter charge (v cc = 108 v, i c = 20 a, v ge = 5 v ) q ge e 3.0 e gatecollector charge v ge = 5 v) q gc e 6.0 e (1) pulse test: pulse width 300 m s, duty cycle 2%.
mgp20n14cl 3 motorola tmos power mosfet transistor device data package dimensions case 221a09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 q h z l v g n a k 123 4 d seating plane t c s t u r j style 9: pin 1. gate 2. collector 3. emitter 4. collector
mgp20n14cl 4 motorola tmos power mosfet transistor device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including at ypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa/europe/locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 035487 8488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com t ouchtone 16022446609 asia/pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ mgp20n14cl/d ?
|
